Evolution of Group III Nitride Quantum Dot - A Breakthrough in Semiconductor Optoelectronic Technology

Rashid, Mohd Abdur and Humayun, M. A. (2014) Evolution of Group III Nitride Quantum Dot - A Breakthrough in Semiconductor Optoelectronic Technology. In: Advance Topics in Engineering Research and Applications. IISTE , USA. ISBN 978-1497506718

[img] Text
Book cover pages.pdf
Restricted to Registered users only

Download (204Kb) | Request a copy
[img] Text
Submitted Version.pdf
Restricted to Registered users only

Download (644Kb) | Request a copy

Abstract

This paper highlights the evolution of group-III nitride based semiconductor quantum dot and their application in fabrication of laser as active layer material. The gradual improvement of material system from bulk semiconductor to the nano scale quantum structures has been described in this paper. The physical properties as well as the opto-electronic features of the quantum structures have been mentioned here in detail. Some unique properties of quantum dot structure have made it superior from the other available material systems. This paper focuses mainly on formation of quantum dot material system and their potentiality in laser design.

Item Type: Book Section
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty / Institute: Faculty of Design Arts & Engineering Technology
Depositing User: Prof Madya Dr. Mohd Abdur Rashid
Date Deposited: 23 Dec 2014 00:04
Last Modified: 23 Dec 2014 00:04
URI: http://erep.unisza.edu.my/id/eprint/1692

Actions (login required)

View Item View Item